发明名称 |
Semiconductor memory device, memory system including the same and operating method thereof |
摘要 |
Provided are a semiconductor memory device, a memory system including the same, and an operating method thereof. The semiconductor memory device includes a memory cell array including a plurality of memory cells, a peripheral circuit suitable for reading least significant bit data and most significant bit data of neighboring memory cells adjacent to selected memory cells out of the plurality of memory cells, and generating pattern flag data using the least significant bit data and the most significant bit data and a control logic suitable for controlling the peripheral circuit to set a read voltage to be applied to the selected memory cells based on the pattern flag data. |
申请公布号 |
US9293177(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201414184279 |
申请日期 |
2014.02.19 |
申请人 |
SK Hynix Inc. |
发明人 |
Choi Seok Hwan;Lee Hyun Ju |
分类号 |
G11C7/02;G11C29/02;G11C29/42;G11C7/10 |
主分类号 |
G11C7/02 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A semiconductor memory device, comprising:
a memory cell array including a plurality of memory cells; a peripheral circuit configured to read least significant bit data and most significant bit data of neighboring memory cells adjacent to selected memory cells out of the plurality of memory cells, and generate pattern flag data using the least significant bit data and the most significant bit data; and a control logic configured to select and output one of a plurality of temporarily stored read data according to the pattern flag data, wherein the neighboring memory cells are included in neighboring memory pages adjacent to a page of the selected memory cells. |
地址 |
Gyeonggi-do KR |