Monolithic bi-directional current conducting device and method of making the same

摘要

A monolithic bi-directional device provides bi-directional power flow and bi-directional blocking of high-voltages. The device includes a first transistor having a first drain formed over a first channel layer that overlays a substrate, and a second transistor that includes a second drain formed over a second channel layer that overlays the substrate. The substrate forms a common source for both the first transistor and the second transistor.

主权项

1. A method of making a monolithic bi-directional device for providing bi-directional power flow and bi-directional blocking of high-voltages, the method comprising:
forming a semiconductor structure stack over a doped substrate, the semiconductor structure stack comprising a heavily doped contact interface layer overlying a lightly doped drift layer overlying a medium doped channel layer; performing an etching process on the semiconductor structure stack to form a first set of drain pillars formed over a first portion of the medium doped channel layer, and a second set of drain pillars formed over a second portion of the medium doped channel layer; forming drain contacts on the first set of drain pillars and the second set of drain pillars, and first gate contacts between the first set of drain pillars and in contact with the first portion of the medium doped channel layer and second gate contacts between the second set of drain pillars and in contact with the second portion of the medium doped channel layer; and forming a source contact on the doped substrate.