发明名称 |
Sub-wavelength antenna enhanced bilayer graphene tunable photodetector |
摘要 |
The integration of bilayer graphene with an absorption enhancing sub-wavelength antenna provides an infrared photodetector capable of real-time spectral tuning without filters at nanosecond timescales. |
申请公布号 |
US9293627(B1) |
申请公布日期 |
2016.03.22 |
申请号 |
US201314056023 |
申请日期 |
2013.10.17 |
申请人 |
Sandia Corporation |
发明人 |
Beechem, III Thomas Edwin;Howell Stephen W.;Peters David W.;Davids Paul;Ohta Taisuke |
分类号 |
H01L31/113;H01L29/66;H01L29/16;H01L51/42;H01L31/0232 |
主分类号 |
H01L31/113 |
代理机构 |
|
代理人 |
Bieg Kevin W. |
主权项 |
1. A tunable photodetector, comprising:
a bilayer graphene layer; a gate dielectric layer disposed on the frontside of the bilayer graphene layer; a resonant sub-wavelength antenna top gate disposed on the gate dielectric layer, wherein the resonant sub-wavelength antenna top gate and the gate dielectric layer are adapted to amplify the absorption of incident light in the bilayer graphene layer by resonant surface mode coupling; a conductive back gate disposed on the backside and insulated from the bilayer graphene layer for applying an electric field with the top gate across the bilayer graphene layer to tune a bandgap therein; and a source and a drain disposed on the bilayer graphene layer with the gate dielectric layer therebetween, thereby forming a dual-gated field-effect transistor. |
地址 |
Albuquerque NM US |