SEMICONDUCTOR STRUCTURE

摘要

A semiconductor structure comprising an improved ESD protection device is provided. The semiconductor structure comprises a substrate, a well formed in the substrate, a first heavily doped region formed in the well, a second heavily doped region formed in the well and separated apart from the first heavily doped region, a gate structure formed on the substrate between the first heavily doped region and the second heavily doped region, a field region formed in the well under the first heavily doped region and the gate structure, and a field oxide/shallow trench isolation structure formed adjacent to the first heavily doped region. The field region is not formed under the second heavily doped region. The well and the field region have a first type of doping. The first heavily doped region and the second heavily doped region have a second type of doping.

主权项

1. A semiconductor structure, comprising:
a substrate; a well formed in the substrate, the well having a first type of doping; a first heavily doped region formed in the well, the first heavily doped region having a second type of doping; a second heavily doped region formed in the well and separated apart from the first heavily doped region, the second heavily doped region having the second type of doping; a gate structure formed on the substrate between the first heavily doped region and the second heavily doped region; a field region formed in the well under the first heavily doped region and the gate structure, the field region having the first type of doping, wherein the field region is not be formed under the second heavily doped region; and a field oxide formed adjacent to the first heavily doped region; wherein the first heavily doped region and the second heavily doped region are directly formed in the well, and wherein the first heavily doped region and the second heavily doped region directly contact the well.