MEMORY DEVICE CAPABLE OF QUICKLY REPAIRING FAIL CELL

摘要

The memory device includes a memory array, control logic and a recovery circuit. The memory array has a first region configured to store data, a second region configured to store a portion of fail cell information, and a third region configured to store recovery information. The fail cell information identifies failed cells in the first region, and the recovery information is for recovering data stored in the identified failed cells. The control logic is configured to store the fail cell information, to transfer the portion of the fail cell information to the second region of the memory array, and to determine whether to perform a recovery operation based on address information in an access request and the portion of the fail cell information stored in the second region. The access request is a request to access the first region. The recovery circuit is configured to perform the recovery operation.

主权项

1. A memory device, comprising:
a memory array having a first region configured to store data, a second region configured to store a portion of fail cell information, and a third region configured to store recovery information, the fail cell information identifying failed cells in the first region, the recovery information for recovering data stored in the identified failed cells; and a control logic configured to store the fail cell information, to transfer the portion of the fail cell information to the second region of the memory array, to determine whether to perform a recovery operation based on address information in an access request and the portion of the fail cell information stored in the second region, and the access request being a request to access the first region; and a recovery circuit configured to perform a recovery operation if the control logic determines to perform the recovery operation.