发明名称 METHOD FOR PRODUCING BLOCK COPOLYMER AND ARTICLE PRODUCED THEREFROM
摘要 PROBLEM TO BE SOLVED: To provide a block copolymer that contains a highly etch resistant domain that can achieve low defects at 50 nm or less pitch under thermal annealing processes without a metal staining process.SOLUTION: A composition contains: a first block copolymer which contains a first block and a second block and in which the first block has a surface energy higher than that of the second block; a second block copolymer that contains the first block and the second block and in which the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; and a first polymer which is chemically the same as or similar to the first block of the first block copolymer and the first block and the second block copolymer.SELECTED DRAWING: None
申请公布号 JP2016034748(A) 申请公布日期 2016.03.17
申请号 JP20150115413 申请日期 2015.06.08
申请人 DOW GLOBAL TECHNOLOGIES LLC;ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 JIEQIAN J ZHANG;PHILLIP D HUSTAD;PETER TOREFONAS III;LI MINGQI;VALERIY V GINZBURG;JEFFREY D WEINHOLD
分类号 B32B27/28;B32B7/02;C08G81/02;C08L101/00 主分类号 B32B27/28
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