发明名称 |
Preventing Delamination and Cracks in Fabrication of Group III-V Devices |
摘要 |
In an exemplary implementation, a method includes growing a III-Nitride body over a group IV substrate in a semiconductor wafer. The method includes forming at least one device layer over the III-Nitride body. The method also includes etching grid array trenches in the III-Nitride body, where the etching of the grid array trenches may extend into the group IV substrate. The method can also include forming an edge trench around a perimeter of the semiconductor wafer. The method further includes forming separate dies by cutting the semiconductor wafer approximately along the grid array trenches. |
申请公布号 |
US2016079122(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514945711 |
申请日期 |
2015.11.19 |
申请人 |
Infineon Technologies Americas Corp. |
发明人 |
Briere Michael A. |
分类号 |
H01L21/78;H01L23/00;H01L21/02 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
El Segundo CA US |