发明名称 蓄電装置の作製方法
摘要 To provide a method for forming an electrode for a storage battery, including the step of: forming a metal layer which is over a current collector and has an edge portion; and forming a crystalline silicon layer, which is over the etched metal layer and includes a silicon whisker, as an active material layer by a low pressure chemical vapor deposition (LPCVD) method in which heating is performed with the use of a deposition gas containing silicon.
申请公布号 JP5885940(B2) 申请公布日期 2016.03.16
申请号 JP20110116719 申请日期 2011.05.25
申请人 株式会社半導体エネルギー研究所 发明人 山崎 舜平
分类号 H01M4/1395;H01G11/06;H01G11/24;H01G11/30;H01G11/66;H01G11/68;H01G11/70;H01G11/86;H01M4/134;H01M4/38;H01M4/62 主分类号 H01M4/1395
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