Thin film transistor array substrate for digital photo-detector

摘要

A thin film transistor array substrate for a digital photo-detector is provided. The photo-detector includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; a thin film transistor at each intersection between the gate lines and the data lines to output a photoelectric conversion signal from the photodiode to the data lines in response to a scan signal supplied by the gate lines; and a light-shielding layer over each channel region of the respective thin film transistors. Each light-shielding layer is electrically connected to the respective gate line.

主权项

1. A thin film transistor array substrate for a digital photo-detector, comprising:
a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; a thin film transistor at each intersection between the gate lines and the data lines to output a photoelectric conversion signal from the photodiode to the data lines in response to a scan signal supplied by the gate lines; and a light-shielding layer over each channel region of the respective thin film transistors, each light-shielding layer electrically connected to the respective gate line, wherein the photodiode includes, in order, a first electrode, a semiconductor layer, and a second electrode; and wherein the light-shielding layer includes the same material as the first electrode of the photodiode.