发明名称 Semiconductor device and method of bonding semiconductor die to substrate in reconstituted wafer form
摘要 A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate.
申请公布号 US9287204(B2) 申请公布日期 2016.03.15
申请号 US201314039092 申请日期 2013.09.27
申请人 STATS ChipPAC, Ltd. 发明人 Kim KyungMoon;Lee KooHong;Yee JaeHak;Kim YoungChul;Hoang Lan;Marimuthu Pandi C.;Anderson Steve;Lee HunTeak;Chi HeeJo
分类号 H01L23/48;H01L23/52;H01L29/40;H01L23/498;H01L23/00;H01L23/31;H01L21/56 主分类号 H01L23/48
代理机构 Atkins and Associates, P.C. 代理人 Atkins Robert D.;Atkins and Associates, P.C.
主权项 1. A method of making a semiconductor device, comprising: providing a plurality of semiconductor die; providing a carrier; disposing the semiconductor die over the carrier to form a reconstituted wafer; forming a plurality of first bumps over the semiconductor die while disposed over the carrier; disposing the reconstituted wafer over a substrate panel; and reflowing the first bumps to bond the semiconductor die to the substrate panel while disposed over the carrier.
地址 Singapore SG