Interconnection structure including air gap, semiconductor device including air gap, and method of manufacturing the same

摘要

A semiconductor device includes a first insulating layer, a second insulating layer formed on the first insulating layer, a plurality of interconnection lines formed in the second insulating layer, and a first air gap disposed between the first insulating layer and the second insulating layer to surround a lower part of the interconnection lines.

主权项

1. A semiconductor device comprising:
a first insulating layer; a second insulating layer formed on the first insulating layer; a first air gap disposed between the first insulating layer and the second insulating layer; and a plurality of interconnection lines formed in the second insulating layer, wherein a lower part of the interconnection lines protrudes into the first air gap and is surrounded by the first air gap, wherein a height of the first air gap is less than a height of the interconnection lines, and a space between the interconnection lines above the first air gap is filled with the second insulating layer.