| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having high connection reliability. <P>SOLUTION: A semiconductor chip 5 comprises a bump electrode 51 formed of a first metal. A circuit board 1 comprises a metal layer 27 formed of a second metal and a third metal. The circuit board 1 is joined to the semiconductor chip 5 so as to face that surface of the semiconductor chip 5 on which the bump electrode 51 is formed. A junction 300 at which the bump electrode 51 and the metal layer 27 are joined together is provided with a first region 320 containing the first metal and a second region 340 having a sea-island structure which comprises a sea part containing the first metal and an island part containing the second metal. <P>COPYRIGHT: (C)2013,JPO&INPIT |
