SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

An objective of the present invention is to provide a semiconductor device and a manufacturing method thereof which reduce a height of a pin playing a role of a seed of an epitaxial film used as a source/drain to reduce a size of the source/drain and improve reliability. The semiconductor device comprises: a first pin-shaped active pattern which is formed on a substrate, is extended in a first direction, and comprises a first to a third portion sequentially arranged in the first direction, and wherein a height from an upper surface of the substrate to an upper surface of the first portion is higher than a height from the upper surface of the substrate to an upper surface of the second portion, and the height from the upper surface of the substrate to the upper surface of the second portion is higher than a height from the upper surface of the substrate to an upper surface of the third portion; a gate electrode extended in a second direction different from the first direction, and formed on the first portion; and a first source/drain formed on the third portion.