发明名称 DATA RETENTION CONTROL CIRCUIT, DATA WRITING METHOD, DATA READING METHOD, METHOD OF TESTING CHARACTERISTICS OF FERROELECTRIC STORAGE DEVICE, AND SEMICONDUCTOR CHIP
摘要 A data retention control circuit includes a data retention part having first and second logic circuits, a ferroelectric storage part having first and second ferroelectric device parts, first and second transmission control parts, and a test voltage supply control part. The first transmission control part has first and second transmission control circuits controlling first and second logic signals to the first and second ferroelectric device parts, respectively. The second transmission control part has third and fourth transmission control circuits controlling transmission of first and second storage data from the first and second ferroelectric device part to the second and first logic circuits, respectively. The test voltage supply control part has first and second test voltage supply control circuits controlling supplies of first and second test voltages to the second and first logic circuit, respectively.
申请公布号 US2016071569(A1) 申请公布日期 2016.03.10
申请号 US201514847331 申请日期 2015.09.08
申请人 Rohm Co., Ltd. 发明人 Kimura Hiromitsu
分类号 G11C11/22;G11C29/14 主分类号 G11C11/22
代理机构 代理人
主权项 1. A data retention control circuit, comprising: a data retention part for retaining a logic level of a data signal to be output as an output signal, the data retention part having a first logic circuit for outputting a first logic signal based on the logic level of the data signal, and a second logic circuit for outputting a second logic signal, which is based on the first logic signal, to the first logic circuit; a ferroelectric storage part having a first ferroelectric device part for storing as first storage data a logic level of the first logic signal, which is output from the first logic circuit, and a second ferroelectric device part for storing as second storage data a logic level of the second logic signal, which is output from the second logic circuit; a first transmission control part having a first transmission control circuit for controlling transmission of the first logic signal, which is output from the first logic circuit, to the first ferroelectric device part, and a second transmission control circuit for controlling transmission of the second logic signal, which is output from the second logic circuit, to the second ferroelectric device part; a second transmission control part having a third transmission control circuit provided at a first node which is a connection point between the first ferroelectric device part and the second logic circuit, and a fourth transmission control circuit provided at a second node which is a connection point between the second ferroelectric device part and the first logic circuit, the third transmission control circuit controlling transmission of the first storage data, which is output from the first ferroelectric device part, to the second logic circuit, and the fourth transmission control circuit controlling transmission of the second storage data, which is output from the second ferroelectric device part, to the first logic circuit; and a test voltage supply control part having a first test voltage supply control circuit connected to a third node which is a connection point between the third transmission control circuit and the second logic circuit, and a second test voltage supply control circuit connected to a fourth node which is a connection point between the fourth transmission control circuit and the first logic circuit, the first test voltage supply control circuit controlling a supply of a first test voltage to the second logic circuit, and the second test voltage supply control circuit controlling a supply of a second test voltage to the first logic circuit.
地址 Kyoto JP