CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME

摘要

Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

主权项

1. An integrated circuit device, comprising:
a decoupling structure having a first capacitor and a second capacitor that is different from the first capacitor, the decoupling structure comprising: a first plurality of conductive patterns that each extend in a vertical direction; a second plurality of conductive patterns that each extend in the vertical direction; a horizontally disposed unitary supporting structure that structurally supports the first plurality of conductive patterns and the second plurality of conductive patterns; and a common electrode disposed between ones of the first plurality of conductive patterns and between ones of the second plurality of conductive patterns, wherein the first plurality of conductive patterns and the common electrode comprise electrodes of the first capacitor, and the second plurality of conductive patterns and the common electrode comprise electrodes of the second capacitor, wherein the first plurality of conductive patterns and the second plurality of conductive patterns are horizontally spaced apart from each other in a first direction with a separation region therebetween, wherein the decoupling structure is mounted on an underlying lower structure so that the lower structure and the decoupling structure are stacked in the vertical direction, and the unitary supporting structure comprises a plurality of openings when viewed from above, and wherein none of the plurality of openings extend into the separation region.