| 摘要 |
A film-forming apparatus 1 includes a reaction chamber 2, an exhaust mechanism 3, and a pipe 4 connecting them. An inert gas supply pipe 11 supplying an inert gas 15 in the pipe 4, and a trap section 5' connecting with an exhaust pipe 16 exhausting a reaction product 14 are provided in the pipe 4. A substrate is disposed in the reaction chamber 2 and film formation is performed on the substrate by supplying a reaction gas 7 from a reaction gas supply pipe 8. The reaction product 14 is collected in the trap section 5'. An inert gas 15 is supplied to the trap section 5' to pressure-feed the reaction product 14 from the exhaust pipe 16 to a detoxifying apparatus 20. Cleaning is performed by supplying a cleaning gas 21 to the reaction chamber 2 and exhausting the same while bypassing the trap section 5. |
