| 发明名称 | Semiconducting graphene composition, and electrical device including the same | ||
| 摘要 | A graphene composition including a graphene monolayer and an alkali metal disposed on the graphene monolayer. | ||
| 申请公布号 | US9281385(B2) | 申请公布日期 | 2016.03.08 |
| 申请号 | US201113164532 | 申请日期 | 2011.06.20 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Shin Hyeon-jin;Choi Jae-young;Ahn Joung-real;Jeon Cheol-ho |
| 分类号 | H01L29/06;H01L29/778;B82Y10/00;B82Y30/00;B82Y40/00;H01L21/28;H01L29/16;H01L29/49;H01L29/73;H01L29/76;H01L29/786 | 主分类号 | H01L29/06 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A graphene composition comprising: a planar-shaped molecular structure consisting of a graphene monolayer; and an alkali metal disposed on the graphene monolayer, wherein the alkali metal is in the form of at least one selected from the group consisting of a continuous thin film, a nanorod, and a nanocluster. | ||
| 地址 | KR | ||