SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device includes: a body region of a second conductivity type formed in a semiconductor layer of a first conductivity type in a semiconductor substrate; a gate electrode facing the body region via a gate insulating film; a source region of the first conductivity type formed in the body region, on a first side of the gate electrode; a drain region of the first conductivity type formed in the semiconductor substrate such that a field oxide film is disposed between the drain region and a second side of the gate electrode; and an impurity diffusion region of the first conductivity type having, at least in a partial region thereof between the drain region and the body region, an impurity concentration distribution in which a concentration of impurities becomes higher in accordance with a depth from a main face of the semiconductor substrate.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate having a main face; a field oxide film formed in a predetermined region on the main face of the semiconductor substrate; a body region of a second conductivity type formed in a semiconductor layer of a first conductivity type in the semiconductor substrate; a gate insulating film formed on part of the main face of the semiconductor substrate; a gate electrode formed on a surface of the gate insulating film and on a surface of the field oxide film, the gate electrode facing the body region via the gate insulating film; a source region of the first conductivity type formed in the body region, on a first side of the gate electrode; a drain region of the first conductivity type formed in the semiconductor substrate such that the field oxide film is disposed between the drain region and a second side of the gate electrode; and an impurity diffusion region of the first conductivity type having, at least in a partial region thereof between the drain region and the body region, an impurity concentration distribution in which a concentration of impurities becomes higher in accordance with a depth from the main face of the semiconductor substrate.