发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME |
摘要 |
The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate. |
申请公布号 |
US2016064465(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201514838631 |
申请日期 |
2015.08.28 |
申请人 |
LG Display Co., Ltd. |
发明人 |
OH Saeroonter;LEE Seungmin;BAECK Juheyuck;KWON Hoiyong;JEON Jeyong;LEE Dohyung |
分类号 |
H01L27/32;H01L27/12;G09G3/32;H01L29/786 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
|
主权项 |
1. A display device, comprising:
a substrate; a first gate insulating layer over the substrate; a first thin film transistor including:
a first semiconductor layer including the polycrystalline semiconductor material on the substrate, and having a middle portion and two side portions,a first source area and a first drain area, each including the oxide semiconductor material and disposed on a respective one of the side portions of the first semiconductor layer, anda first gate electrode disposed on the first gate insulating layer and overlapping the middle portion of the first semiconductor layer; and a second thin film transistor having an oxide semiconductor material on the substrate. |
地址 |
Seoul KR |