SEMICONDUCTOR EPITAXIAL WAFER, METHOD FOR PRODUCING SAME, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT

摘要

The purpose of the present invention is to provide a semiconductor epitaxial wafer which comprises an epitaxial layer having excellent crystallinity. A semiconductor epitaxial wafer according to the present invention is a semiconductor epitaxial wafer 100 wherein an epitaxial layer 20 is formed on a surface 10A of a semiconductor wafer 10. This semiconductor epitaxial wafer 100 is characterized in that the hydrogen concentration profile as determined by SIMS analysis has a peak in the surface layer part of the semiconductor wafer 10, on said surface layer part the epitaxial layer 20 being formed.