发明名称 テクスチャ形成方法及び太陽電池の製造方法
摘要 PROBLEM TO BE SOLVED: To provide a texture formation method capable of performing an etching process by which one surface of a silicon substrate becomes texture-like and the other surface becomes a relatively flat surface, with rising of the silicon substrate being suppressed.SOLUTION: A housing part 13 of a substrate carrier includes a holding groove 14' which holds each of pairs of two silicon substrates in both side plates 13b. A presser plate part 22 of a substrate rise presser member 20 includes a presser groove 22m in which upper end parts of the pair of two silicon substrates 11 are inserted, at a portion contacting to the silicon substrate 11 that has risen from the housing part 13. When the substrate carrier is submerged in an etching process liquid, the rear surfaces that face each other of each of the pairs of the two silicon substrates 11 come close or tightly fit to each other so that the etching process liquid does not flow between the two silicon substrates 11, while adjoining pairs of two silicon substrates 11 come away from each other to allow the etching process liquid to flow, and under this state, etching process is performed.
申请公布号 JP5874675(B2) 申请公布日期 2016.03.02
申请号 JP20130080475 申请日期 2013.04.08
申请人 信越化学工業株式会社 发明人 森山 隼;渡部 武紀;大塚 寛之
分类号 H01L21/306;H01L21/308;H01L31/0236 主分类号 H01L21/306
代理机构 代理人
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