发明名称 Systems and methods for driving transistors with high threshold voltages
摘要 System and method are provided for driving a transistor. The system includes a floating-voltage generator, a first driving circuit, and a second driving circuit. The floating-voltage generator is configured to receive a first bias voltage and generate a floating voltage, the floating-voltage generator being further configured to change the floating voltage if the first bias voltage changes and to maintain the floating voltage to be lower than the first bias voltage by a first predetermined value in magnitude. The first driving circuit is configured to receive an input signal, the first bias voltage and the floating voltage. The second driving circuit is configured to receive the input signal, a second bias voltage and a third bias voltage, the first driving circuit and the second driving circuit being configured to generate an output signal to drive a transistor.
申请公布号 US9276571(B2) 申请公布日期 2016.03.01
申请号 US201314106660 申请日期 2013.12.13
申请人 On-Bright Electronics (Shanghai) Co., Ltd. 发明人 Yang Jiqing;Li Meng;Luo Qiang;Fang Lieyi
分类号 H03K17/30;H03K17/06 主分类号 H03K17/30
代理机构 Jones Day 代理人 Jones Day
主权项 1. A system for driving a transistor, the system comprising: a floating-voltage generator configured to receive a first bias voltage and generate a floating voltage, the floating-voltage generator being further configured to change the floating voltage if the first bias voltage changes and to maintain the floating voltage to be lower than the first bias voltage by a first predetermined value in magnitude; a first driving circuit configured to receive an input signal, the first bias voltage and the floating voltage; and a second driving circuit configured to receive the input signal, a second bias voltage and a third bias voltage, the first driving circuit and the second driving circuit being configured to generate an output signal to drive a transistor; wherein: the first driving circuit includes a first driving transistor, the first driving transistor being configured to receive the first bias voltage and a first gate signal, the first gate signal being associated with at least the input signal, the first bias voltage, and the floating voltage;the second driving circuit includes a second driving transistor, the second driving transistor being configured to receive the third bias voltage and a second gate signal, the second gate signal being associated with at least the input signal, the second bias voltage, and the third bias voltage; andthe first driving transistor and the second driving transistor are further configured to generate the output signal; wherein: if the first driving transistor is turned on by the first gate signal, the second driving transistor is turned off by the second gate signal; andif the first driving transistor is turned off by the first gate signal, the second driving transistor is turned on by the second gate signal.
地址 Shanghai CN