| 发明名称 |
Capacitor structure and method of manufacturing the same |
| 摘要 |
A capacitor structure includes a substrate with a plurality of dielectric layers sequentially formed thereon, a trench formed in the dielectric layers, wherein the trench is composed of at least two interconnected dual damascene recesses, each dual damascene recess formed in one dielectric layer; and a capacitor multilayer disposed on the sidewall of the trench. |
| 申请公布号 |
US9276057(B2) |
申请公布日期 |
2016.03.01 |
| 申请号 |
US201414165535 |
申请日期 |
2014.01.27 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liao Duan Quan;Chen Yikun;Tey Ching Hwa;Zhu Xiao Zhong |
| 分类号 |
H01L29/94;H01L49/02;H01L21/768;H01L23/522;H01L23/532;H01L27/108 |
主分类号 |
H01L29/94 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A capacitor structure, comprising:
a substrate with a plurality of dielectric layers sequentially formed thereon; a trench formed in said dielectric layers, wherein said trench is composed of at least two interconnected dual damascene recesses, said at least two interconnected dual damascene recesses comprise empty spaces or hollow voids, and each dual damascene recess formed in one said dielectric layer; and a capacitor multilayer disposed on the sidewall of said trench and also between the dielectric layers and the dual damascene recesses, wherein the empty spaces or hollow voids are completely enclosed. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
