SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME

摘要

A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device includes forming a gate dielectric layer on a substrate including a first region and a second region, performing a thermal process on the substrate after forming a first gate conductive layer and a capping layer on the first region and the second region, removing the capping layer from the first region and the second region, forming the second gate conductive layer on the first region and the second region, performing a nitration process on the second gate conducive layer, and forming a third gate conducive layer on the second region.