| 发明名称 |
Semiconductor Device |
| 摘要 |
To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna. |
| 申请公布号 |
US2016056140(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514929715 |
申请日期 |
2015.11.02 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Oikawa Yoshiaki;Eguchi Shingo |
| 分类号 |
H01L27/02;H01L23/66 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first insulator; a circuit including a thin film transistor over the first insulator; an antenna over the circuit and electrically connected to the circuit; and a second insulator over the antenna, wherein a first conductive film is provided between the first insulator and the circuit, and wherein a second conductive film is provided between the second insulator and the antenna. |
| 地址 |
Kanagawa-ken JP |
