PRECUT METAL LINES

摘要

Embodiments of the present invention provide a method for cuts of sacrificial metal lines in a back end of line structure. Sacrificial Mx+1 lines are formed above metal Mx lines. A line cut lithography stack is deposited and patterned over the sacrificial Mx+1 lines and a cut cavity is formed. The cut cavity is filled with dielectric material. A selective etch process removes the sacrificial Mx+1 lines, preserving the dielectric that fills in the cut cavity. Precut metal lines are then formed by depositing metal where the sacrificial Mx+1 lines were removed. Thus embodiments of the present invention provide precut metal lines, and do not require metal cutting. By avoiding the need for metal cutting, the risks associated with metal cutting are avoided.

主权项

1. A method of forming a semiconductor structure, the method comprising:
forming a plurality of sacrificial Mx+1 lines over a plurality of metal Mx lines; depositing a dielectric layer over the plurality of sacrificial Mx+1 lines; forming a cut cavity in one sacrificial Mx+1 line of the plurality of sacrificial Mx+1 lines; forming a dielectric region in the cut cavity; removing the plurality of sacrificial Mx+1 lines to form a plurality of Mx+1 line cavities; and filling the plurality of Mx+1 line cavities with a metal to form a plurality of metal Mx+1 lines.