PHOTOMASK, METHOD FOR FABRICATING THE PHOTOMASK, AND METHOD FOR FABRICATING SEMICONDUCTOR USING THE PHOTOMASK

摘要

According to a technical concept of the present invention, provided are a photomask, a method for manufacturing the photomask, and a method for manufacturing a semiconductor device by using the photomask, in which a CD of a pattern of a specific region of the photomask is corrected to improve CD distribution of the pattern on a wafer. The photomask comprises: a substrate and a light blocking pattern formed on the substrate wherein the light blocking pattern is formed of an absorber layer and an anti-reflection coating (ARC) layer. The light blocking pattern comprises at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.