| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is downsized when a GaN-based HEMT and an MIM capacitor are formed on the same substrate, and also to provide a manufacturing method for the semiconductor device. <P>SOLUTION: A lower electrode 11 is formed on the front surface of a substrate 1, a dielectric film 12 is formed on the lower electrode 11, and an upper electrode 14a in contact with the front surface of the substrate 1 is formed on the dielectric film 12. The substrate 1 is etched from its back surface to form a via-hole 1a on the substrate 1 so that the via-hole 1a reaches a part of the upper electrode 14a that is in contact with the front surface of the substrate 1. A via interconnect 36 in contact with the upper electrode 14a via the via-hole 1a is formed on the back surface of the substrate 1. <P>COPYRIGHT: (C)2011,JPO&INPIT |
