发明名称 BARRIER FILM STRUCTURE AND ORGANIC ELECTRONIC DEVICE HAVING THE SAME
摘要 The present invention relates to: a barrier film structure which can effectively prevent inflow of moisture or oxygen from the atmosphere and can prevent the generation of cracks by stress; and an organic electronic device having the same. The barrier film structure comprises: a base film; at least one aluminum oxynitride (Al_xO_yN_z) layer disposed on the base film; and at least one silicon oxide (SiO_n) layer which faces at least one surface of the aluminum oxynitride layer for alleviating stress induced from the aluminum oxynitride layer.
申请公布号 KR20160020839(A) 申请公布日期 2016.02.24
申请号 KR20140106078 申请日期 2014.08.14
申请人 LS MTRON LTD. 发明人 KIM, TAE HYUN;CHO, WON JE;KIM, KYUNG KAK;SHIN, CHUNG HWAN
分类号 B32B27/06;B32B15/08;H01L51/42;H01L51/50 主分类号 B32B27/06
代理机构 代理人
主权项
地址