3-DIMENSION NON-VOLATILE SEMICONDUCTOR DEVICE

摘要

The present technology relates to a three-dimensional non-volatile semiconductor device where vertical channels having string cells of a three-dimensional structure are symmetrically formed in a vertical direction. The three-dimensional non-volatile semiconductor device may include a first pipe channel, a second pipe channel which is located in a lower part of the first pipe channel, a first vertical channel and a second vertical channel which are located in an upper part of the first pipe channel and are connected to the first pipe channel, and a third vertical channel and a forth vertical channel which are located in a lower part of the second pipe channel and are connected to the second pipe channel.