Semiconductor package with through silicon via interconnect and method for fabricating the same

摘要

The invention provides a semiconductor package with a through silicon via (TSV) interconnect and a method for fabricating the same. An exemplary embodiment of the semiconductor package with a TSV interconnect includes a semiconductor substrate. A through hole is formed through the semiconductor substrate. A TSV interconnect is disposed in a through hole. A conductive layer lines a sidewall of the through hole, surrounding the TSV interconnect.

主权项

1. A semiconductor package with a through silicon via (TSV) interconnect, comprising:
a semiconductor substrate; a through hole formed through the semiconductor substrate; a TSV interconnect disposed in the through hole; a conductive layer disposed lining a sidewall of the through hole, surrounding the TSV interconnect; a guard ring doped region disposed in the semiconductor substrate, surrounding the sidewall of the through hole, wherein the guard ring doped region is coupled to a ground terminal; a well region disposed in the semiconductor substrate, wherein a boundary of the guard ring doped region is formed within the well region; and an isolation region disposed on the well region, between the sidewall of the through hole and the guard ring doped region, wherein the conductive layer is connected to a bottom of the isolation region.