| 发明名称 |
Method for treating a substrate and a substrate |
| 摘要 |
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET. |
| 申请公布号 |
US9269763(B2) |
申请公布日期 |
2016.02.23 |
| 申请号 |
US201113881420 |
申请日期 |
2011.11.08 |
| 申请人 |
Turun Yliopisto |
发明人 |
Laukkanen Pekka;Lang Jouko;Punkkinen Marko;Tuominen Marjukka;Tuominen Veikko;Dahl Johnny;Vayrynen Juhani |
| 分类号 |
H01L21/02;H01L29/02;H01L21/28;H01L21/316;H01L29/10;H01L29/20;H01L29/205 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
Lydon James C. |
| 主权项 |
1. A compound semiconductor substrate, wherein the substrate comprises at least
an In-containing III-As, III-Sb or III-P base material having a first side and a second side, and a crystalline (3×1)-O, c(4×2)-O, (1×2)-O, (2×3)-O, (3×1)-SnO, (3×3)-SnO, or (1×1)-SnO oxide layer being formed on at least a part of the first side of the base material. |
| 地址 |
Turun Yliopisto FI |
