Semiconductor device having gate wire disposed on roughened field insulating film

摘要

A semiconductor device of the present disclosure includes a semiconductor layer provided on a main surface of a substrate. A cell region is provided with a gate insulating film disposed on the semiconductor layer and a gate electrode disposed on the gate insulating film, and a wiring region is provided with a field insulating film disposed on the semiconductor layer and a gate wire disposed on the field insulating film. An end of the field insulating film has a convex shape in a cross section perpendicular to the main surface of the substrate, and an upper surface of the field insulating film is rougher than an upper surface of a portion of the gate wire below which the field insulating film is not disposed.

主权项

1. A semiconductor device comprising:
a substrate on which a cell region and a wiring region are defined; a semiconductor layer disposed on a main surface of the substrate; a gate insulating film disposed on the semiconductor layer in the cell region; a gate electrode disposed on the gate insulating film; a field insulating film disposed on the semiconductor layer in the wiring region; and a gate wire partially disposed on the field insulating film and electrically connected to the gate electrode, wherein the field insulating film is thicker than the gate insulating film; an end of the field insulating film has a convex shape in a cross section perpendicular to the main surface of the substrate; and an upper surface of the field insulating film is rougher than an upper surface of a portion of the gate wire below which the field insulating film is not disposed.