PROCEDE DE PREPARATION D'UN ECHANTILLON EN POINTE POUR ANALYSE EN SONDE TOMOGRAPHIQUE DE STRUCTURES ELECTRONIQUES

摘要

The method involves deposition of a thin layer of an insulating material located on an outer surface of a sample, upto a height of a structure to be analyzed (ROI). The thin layer is extended over a total height of an insulating layer (BOX) upto a region at a height of a support substrate (S) e.g. silicon-on-insulator substrate. A link of the insulating material mechanically connecting the support substrate, the insulating layer and the structure to be analyzed, is formed. The structure to be analyzed is placed on the substrate and covered with a protection layer (cap).