METHOD FOR PRODUCING DOPED ZINC CHALCOGENIDES

摘要

The invention relates to infrared optics, and specifically to the creation of laser media, and to developing a method for producing doped zinc chalcogenides for tunable solid-state lasers used in medicine, biology and other fields. A method for producing doped zinc chalcogenides via diffusion annealing involves applying, to a layer of zinc chalcogenide using a known method, a doping component film made of chromium or iron, forming a layer of zinc chalcogenide on said film by means of chemical deposition from a gas phase, and subjecting a produced three-layer structure to diffusion annealing. The zinc chalcogenide consists of zinc selenide or of zinc sulfide. The technical result from using the invention consists in producing doped zinc chalcogenides which are more resistant to the laser penetration of the surface of a specimen.