MEMORY STRUCTURE HAVING TOP ELECTRODE WITH PROTRUSION

摘要

The present disclosure relates to an RRAM (resistive random access memory) cell having a top electrode with a geometry configured to improve the electric performance of the RRAM cell, and an associated method of formation. In some embodiments, the RRAM cell has a lower insulating layer with a micro-trench located over a lower metal interconnect layer disposed within a lower inter-level dielectric (ILD) layer that overlies a semiconductor substrate. A bottom electrode is disposed over the micro-trench, and a dielectric data storage layer is located over the bottom electrode. A top electrode is disposed over the dielectric data storage layer. The top electrode has a protrusion that extends outward from a bottom surface of the top electrode at a position overlying the micro-trench. The protrusion generates a region having an enhanced electric field within the dielectric data storage layer, which improves performance of the RRAM cell.

主权项

1. An RRAM (resistive random access memory) cell, comprising:
a lower insulating layer having a micro-trench located over a lower metal interconnect layer disposed within a lower inter-level dielectric (ILD) layer that overlies a semiconductor substrate; a bottom electrode disposed over the micro-trench; a dielectric data storage layer located over the bottom electrode; and a top electrode disposed over the dielectric data storage layer, wherein the top electrode has a protrusion that extends outward from a bottom surface of the top electrode at a position overlying the micro-trench.