SEMICONDUCTOR DEVICE AND DISPLAY DEVICE HAVING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To inhibit fluctuation in electric characteristics and improve reliability in a semiconductor device having a transistor having an oxide semiconductor.SOLUTION: A semiconductor device comprises a transistor including: an oxide semiconductor film on a first insulation film; a gate insulation film on the oxide semiconductor film; a gate electrode on the gate insulation film; a conductive film which contacts a lateral face in a channel length direction of the gate electrode; and a second insulation film on the oxide semiconductor film. The oxide semiconductor film has a first region which overlaps the gate electrode, a second region which overlaps the conductive film and a third region which contacts the second insulation film. The third region has a region where a concentration of an impurity element is higher than that of the second region.SELECTED DRAWING: Figure 1