发明名称 |
ULTRAVIOLET LIGHT-EMITTING DEVICE |
摘要 |
Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2nm, radiating an ultraviolet ray with a peak wavelength of 340nm to 360nm. |
申请公布号 |
EP2985792(A1) |
申请公布日期 |
2016.02.17 |
申请号 |
EP20140782565 |
申请日期 |
2014.03.07 |
申请人 |
SEOUL VIOSYS CO., LTD. |
发明人 |
CHOI, HYO SHIK;HWANG, JUNG HWAN;HAN, CHANG SUK |
分类号 |
H01L33/04;H01L33/00;H01L33/06;H01L33/14;H01L33/32 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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