发明名称 |
PATTERN FORMING METHOD |
摘要 |
A pattern forming method of forming a pattern on an underlying layer of a target object includes forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; etching the second region partway in a thickness direction thereof in a capacitively coupled plasma processing apparatus after the processing of the target object; generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons. |
申请公布号 |
US2016042970(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201414776886 |
申请日期 |
2014.04.09 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Morikita Shinya;Nishimura Eiichi;Yamashita Fumiko |
分类号 |
H01L21/311;H01L21/02 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
1. A pattern forming method of forming a pattern on an underlying layer of a target object, comprising:
forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; etching the second region partway in a thickness direction of the second region in a capacitively coupled plasma processing apparatus after the processing of the target object; generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons onto the target object. |
地址 |
Tokyo JP |