SEMICONDUCTOR DEVICE, POWER MODULE, ELECTRIC POWER CONVERTING DEVICE, AUTOMOBILE, AND RAILWAY VEHICLE

摘要

The invention prevents a decrease in breakdown voltage attributable to an accumulation of electric charge in a termination region of a SiC element, and achieves a reduction in the size of the SiC element terminating structure. As means therefor there are provided, in the vicinity of a boundary between an active region and the termination region of a semiconductor chip: a MOS structure; a channel region below said MOS structure; and a diffusion region which is adjacent to the channel region and is electrically connected to a source electrode. In the semiconductor chip, a gate electrode which is a constituent of the MOS structure is turned on, and electrons are supplied to the diffusion region and the channel region, thereby eliminating holes that have accumulated in the substrate in the termination region.