Nitride semiconductor light emitting device

摘要

A light emitting device includes a first layer of a first conductivity type, a second layer of a second conductivity type, a light emitting layer between the first and second layers, a first electrode disposed on a surface of the first layer, and a second electrode disposed on a surface of the second layer and electrically insulated from the first layer. The first layer has first and second regions, each of which contacts the first electrode. A dopant concentration in the first region is less than a dopant concentration in the second region.

主权项

1. A nitride semiconductor light emitting device, comprising:
a first layer having a first conductivity type; a second layer having a second conductivity type; a light emitting layer between the first layer and the second layer, the light emitting layer including a nitride semiconductor material; a first electrode disposed on a surface of the first layer; and a second electrode disposed on a first surface of the second layer and electrically insulated from the first layer, wherein the first layer has a first region contacting the first electrode and having a first dopant concentration, and a second region contacting the first electrode and having a second dopant concentration that is greater than the first dopant concentration, and a portion of the first electrode is between the second region and the second electrode in a direction parallel to the first surface.