Semiconductor device

摘要

It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming a silicon nitride oxide film over a glass substrate; forming an oxide insulating film over the silicon nitride oxide film; and forming an amorphous semiconductor film over the oxide insulating film; performing a heat treatment on the silicon nitride oxide film, the oxide insulating film and the amorphous semiconductor film; and forming a crystalline semiconductor film by irradiating the amorphous semiconductor film with a pulsed laser beam, wherein the amorphous semiconductor film comprises silicon, wherein total stress of the silicon nitride oxide film, the oxide insulating film and the amorphous semiconductor film is −150 N/m to 0 N/m after the heat treatment, wherein the silicon nitride oxide film is formed by using a source gas comprising SiH4, N2O, NH3 and H2, and wherein the silicon nitride oxide film includes more nitrogen than oxygen.