发明名称 Light emitting device
摘要 In an electroluminescence device, highly efficient light emission is realized without reducing the durability thereof. The electroluminescence device includes electrodes, a plurality of layers deposited between the electrodes, a light emitting region between the plurality of layers, the light emitting region emitting light by application of an electric field between the electrodes. The plurality of layers include a metal thin-film in the vicinity of the light emitting region. The metal thin-film induces plasmon resonance on the surface thereof by the emitted light. Surface modification is provided on at least one of the surfaces of the metal thin-film. The surface modification includes an end group having polarity that makes the work function of the metal thin-film become close to the work function of at least a layer next to the metal thin-film.
申请公布号 US9257661(B2) 申请公布日期 2016.02.09
申请号 US201013262201 申请日期 2010.03.29
申请人 UDC Ireland 发明人 Naya Masayuki;Sotoyama Wataru;Yasuda Hideki
分类号 H01L51/50 主分类号 H01L51/50
代理机构 Riverside Law LLP 代理人 Riverside Law LLP
主权项 1. An electroluminescence device comprising: electrodes; a plurality of layers that are deposited one on another between the electrodes; and a light emitting region between the plurality of layers, the light emitting region emitting light by application of an electric field between the electrodes, wherein the plurality of layers include a solid metal thin-film which spreads without interruption that is arranged in the vicinity of the light emitting region, the metal thin-film inducing plasmon resonance on the surface thereof by the light emitted from the light emitting region, and wherein surface modification is provided on at least one of the surfaces of the metal thin-film, wherein the surface modification is selected from the group consisting of: the surfaces of the metal thin film are modified with an electron donor end group so that the work function of the metal thin-film is less than the work functions of layers next to the metal thin-film; andthe surfaces of the metal thin film are modified with an electron withdrawing end group so that the work function of the metal thin-film is greater than the work functions of layers next to the metal thin-film.
地址 Dublin IE