| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device having good characteristics and a method of manufacturing the same.SOLUTION: A solid-state imaging device 100 includes a semiconductor layer 10 for performing photoelectric conversion by an n-type diffusion layer 10n and a p-type region 10p, and an antireflection film 30 provided on an oxide film 20 provided on a second surface 10b of the semiconductor layer 10. The antireflection film 30 is formed of a film having a refractive index of 2.0 to 3.0 (inclusive) or a film having conductivity. A negative voltage is applied to the antireflection film 30.SELECTED DRAWING: Figure 1 |
