发明名称 METHOD OF CONVERTING BETWEEN NON-VOLATILE MEMORY TECHNOLOGIES AND SYSTEM FOR IMPLEMENTING THE METHOD
摘要 A method of designing a charge trapping memory array includes designing a memory array layout. The memory array layout includes a first type of transistors; electrical connections between memory cells of the memory array layout; a first input/output (I/O) interface; and a charge pump. The method further includes modifying the memory array layout, using a processor, to replace the first type of transistors with a second type of transistors different than the first type of transistors. The method further includes modifying the memory array layout, using the processor, to modify the charge pump based on an operating voltage of the second type of transistors.
申请公布号 US2016034629(A1) 申请公布日期 2016.02.04
申请号 US201514878039 申请日期 2015.10.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SUNG Hung-Cheng;CHIH Yue-Der;CHEN Chia-Hsing
分类号 G06F17/50;H01L27/02 主分类号 G06F17/50
代理机构 代理人
主权项 1. A method of designing a charge trapping memory array, the method comprising: designing a memory array layout, the memory array layout comprising: a first type of transistors,electrical connections between memory cells of the memory array layout,a first input/output (I/O) interface, anda charge pump; modifying the memory array layout, using a processor, to replace the first type of transistors with a second type of transistors different than the first type of transistors; and modifying the memory array layout, using the processor, to modify the charge pump based on an operating voltage of the second type of transistors.
地址 Hsinchu TW