VERTICAL NITRIDE-BASED TRANSISTOR

摘要

According to an embodiment, a vertical nitride-based transistor includes: a first type doped nitride based first semiconductor area; a second type doped nitride based second semiconductor pattern area discontinuously placed in the first semiconductor area and functioning as a current blocking layer; a gate dielectric layer and a gate electrode, placed inside a trench selectively formed in the first semiconductor area placed in an upper part of the second semiconductor pattern area; and a second type doped nitride based third semiconductor pattern area formed in a lower part of the second semiconductor pattern area and placed in a thickness direction of the first semiconductor area.