Solid-state imaging apparatus and electronic apparatus including shielding members connecting with element isolation regions

摘要

There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper surfaces of the element isolation regions. The element isolation regions have high impurity concentration regions of a high impurity concentration connected to at least a part of the shielding members.

主权项

1. A solid-state imaging apparatus comprising:
a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate; element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, the element isolation regions including high impurity concentration semiconductor regions having a higher impurity concentration than other semiconductor regions within the element isolation regions; and shielding members formed on upper surfaces of the element isolation regions, wherein the high impurity concentration semiconductor regions are connected to at least a part of the shielding members.