Semiconductor device and method for manufacturing the same

摘要

It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

主权项

1. A semiconductor device comprising:
a transistor comprising an oxide semiconductor layer, wherein the oxide semiconductor layer contains In, Ga, and Zn, wherein the oxide semiconductor layer comprises crystals represented by InGaZnO4, wherein a Zn content by atomic percent in the oxide semiconductor layer is less than an In content by atomic percent in the oxide semiconductor layer, wherein the Zn content by atomic percent in the oxide semiconductor layer is less than a Ga content by atomic percent in the oxide semiconductor layer, wherein the Ga content by atomic percent in the oxide semiconductor layer is less than the In content by atomic percent in the oxide semiconductor layer, and wherein a proportion of the crystals represented by InGaZnO4 to a whole of crystals is 80 volume % or more.