Capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate

摘要

A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode.

主权项

1. A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate, comprising:
at least an upper electrode and a lower electrode for processing said substrate, said substrate being disposed on said lower electrode during plasma processing; a generator for providing at least a first RF signal to said lower electrode, said first RF signal having a first RF frequency, said first RF signal coupling with a plasma in said plasma processing chamber, thereby inducing an induced RF signal on said upper electrode; a rectifying arrangement for rectifying said induced RF signal to generate a rectified RF signal such that said rectified RF signal is more negatively biased than positively biased, wherein said substrate is configured to be processed while said rectified RF signal is provided to said upper electrode.