发明名称 EXHAUST GAS TREATMENT FACILITY
摘要 PROBLEM TO BE SOLVED: To provide an exhaust gas treatment facility capable of suppressing adhesion and accumulation of dust of silicon dioxide to a pipeline inner peripheral surface with a simple structure.SOLUTION: A exhaust gas treatment facility includes a detoxification device 13 that detoxifies gas discharged from a facility using a component containing Si in a molecule, such as a semiconductor manufacturing device 11, and a dust separation device 14 that separates dust of silicon dioxide contained in exhaust gas discharged from the detoxification device. As an exhaust gas pipeline 15 from the detoxification device to the dust separation device, used is a metal pipeline on the inner peripheral surface of which baking finish of epoxy resin is executed.SELECTED DRAWING: Figure 1
申请公布号 JP2016017678(A) 申请公布日期 2016.02.01
申请号 JP20140140264 申请日期 2014.07.08
申请人 TAIYO NIPPON SANSO CORP 发明人 HASHIMOTO SHINICHI;SONE DAISUKE
分类号 F23G7/06;B01D53/46;B01D53/68;C23C16/44;F23J15/06;H01L21/02;H01L21/205 主分类号 F23G7/06
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